IXFR 44N50P
Symbol
Test Conditions
Characteristic Values
ISOPLUS247 Outline
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
V DS = 20 V; I D = 22 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 22 A
R G = 3 ? (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 22 A
32
5440
639
40
25
27
70
18
98
35
30
0.15
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.6 ° C/W
° C/W
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
Q RM
I RM
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V, Note 1
I F = 22 A,
-di/dt = 100 A/ μ s
V R = 100V
0.6
6.0
30
132
1.5
200
A
A
V
ns
μ C
A
Notes: 1. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2 6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505 6,710,463 6,771,478 B2
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相关代理商/技术参数
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IXFR44N50Q_03 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs ISOPLUS247, Q-Class
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